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Comparison of Power and Latency Optimized 7t SRAM Bit-Cell With 6t SRAM Bit-Cell


Volume 6 Issue 2 March - May 2018
Research Paper
Comparison of Power and Latency Optimized 7t SRAM Bit-Cell With 6t SRAM Bit-Cell
G. Shivaprakash*, D. S. Suresh **
* Research Scholar and Associate Professor, Department of Electronics and Instrumentation Engineering, Ramaiah Institute of Technology, Bengaluru, Karnataka, India.
** Professor, Department of Electronics and Communication Engineering, Chennabasaveshwara Institute of Technology, Tumkure, Karnataka, India.
Shivaprakash, G., and Suresh, D. S. (2018). Comparison of Power and Latency Optimized 7t SRAM Bit-Cell With 6t SRAM Bit-Cell. i-manager’s Journal on Circuits and Systems, 6(2), 8-12. https://doi.org/10.26634/jcir.6.2.14760
Abstract
In today's smart digital world, for any digital circuit, one of the most vital parts is Static Random Access Memory (SRAM). The power consumption, speed, area etc. have been the major areas of concern in the evolution of different memory architectures. Researchers are working on the modification of basic 6T SRAM cell to meet their requirements by optimizing the performance parameters of SRAM. In the present research work, a novel 7T SRAM cell has been designed, having both low latency and low power. The proposed design has allowed control over threshold voltage and reduced the leakage current. As a consequence, there is a reduction in the static power consumption and load capacitance of SRAM. Dynamic power consumption, Static power consumption, Unit cell delay, Power Delay Product (PDP), Static Noise Margin (SNM) and Write SNM are estimated for 6T and 7T for comparison. On comparison of the performance parameters, the proposed 7T SRAM cell was found to be the cell with least power consumption along with lowest latency among the two cells. Most of the compared parameters show an improvement in the performance of the proposed design as compared to the regular 6T configuration of SRAM. This research was carried out using Cadence Virtuoso Tools on 90 nm technology with Assura Verification tool and Spectre simulation tool.

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