Volume 6 Issue 1 December - February
2018
Research Paper
Nidhi Tiwari*, Vaibhav Neema**, Kamal
J Rangra***, Yogesh Chandra Sharma****
* Research Scholar, Department of
Electronics and Communication Engineering, Vivekananda Global University,
Jaipur, India.
** Assistant Professor, Department of
Electronics and Communication Engineering, Institute of Engineering and
Technology, Devi Ahilya University, Indore, India.
*** Chief Scientist, Transducers and
Actuators Group, CSIR-CEERI, Pilani, India.
**** Professor, Department of
Physics, Vivekananda Global University, Jaipur, India.
Tiwari, N., Neema, V., Rangra, K. J.,
and Sharma, Y. C. (2018). Performance Parameters of Low Power SRAM cells: A
Review. i-manager’s Journal on Circuits and Systems, 6(1),
25-34. https://doi.org/10.26634/jcir.6.1.14495
Abstract
In this paper,
various Low Power SRAM cell design techniques have been reviewed on the basis
of power, stability, and delay. Many studies have proposed various SRAM
architectures for different applications. It has been reported that 6T SRAM
cell are high in speed but at low supply voltage, stability is a critical
issue. It is found that 8T SRAM cell shows the highest level of stability at
low supply voltage, but it has area penalty. Hence in this work all the
required performance parameters of various SRAM cell architectures have been
reviewed. This work will be helpful for VLSI designer to choose proper memory
architecture as per applications. For example, machine learning needs high
performance memory block while bio-medical implants require low power memory
block. This paper also presents various tradeoffs between various design
parameters of SRAM.
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