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An improved DC Characteristics of Quantum Dot Transistor under Illumination


Volume 2 Issue 2 March - May 2014
Research Paper
An improved DC Characteristics of Quantum Dot Transistor under Illumination
V. Vijayakumar*, R. Seshasayanan**
* Research Scholar, Department of Electronics and Communication Engineering, Sathyabama University, Chennai, India.
** Professor, Anna University, Chennai, India.
Vijayakumar, V. and Seshasayanan, R. (2014). An improved DC Characteristics of Quantum Dot Transistor under Illumination. i-manager’s Journal on Circuits and Systems, 2(2), 26-32. https://doi.org/10.26634/jcir.2.2.2976
Abstract
The DC performance of the Quantum Dot Transistor under illumination is studied and presented in this paper. A device structure consisting of Quantum Dots(QD) in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I-V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been calculated, plotted and discussed. The Transfer Characteristics of Quantum Dot Transistor without and with illumination, Optical Response of Quantum Dot Transistor, and sheet concentration of the device is also calculated, plotted and discussed.

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