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Analysis of Carbon Nanotube Field-Effect Transistor

Volume 4 Issue 2 March - May 2016

Research Paper

Analysis of Carbon Nanotube Field-Effect Transistor

Bal Krishnan*, Sanjai Kumar Agarwal**, Sanjeev Kumar***
* Assistant Professor, Department of Electronics Engineering, YMCA University of Science and Technology, Faridabad, Haryana, India.
** Professor, Department of Electronics Engineering, YMCA University of Science and Technology, Faridabad, Haryana, India.
*** Director, DNS College of Engineering and Technology, Amroha, Uttar Pradesh, India.
Krishan, B.,Agarwal, S. K., and Kumar, S. (2016). Analysis of Carbon Nanotube Field-Effect Transistor. i-manager’s Journal on Circuits and Systems, 4(2), 22-29. https://doi.org/10.26634/jcir.4.2.8099

Abstract

This paper explores the insights of the most outstanding application of carbon nanotube in electronic field, the carbon nanotube field-effect transistor (CNFET). The motivation of research in CNFET is fuelled by the unique electrical features of CNT, especially the semiconducting feature. Besides, the continuous effort to find future nanoelectronic device that can perform as excellent as MOSFET also push the research of CNFET to be more aggressive. The first section gives an overview of the structure of CNFET followed by the explanation of CNFET operation as a switching device. The next section provides the comparison between CNFET and MOSFET. In this paper, a comparison is being made between conventional MOSFET and different types of CNFETs, and finally concluded a future replacement of MOSFET. The major difference in CNFETs and MOSFET is that it has CNT in channel instead of Silicon. CNFETs show improved characteristics with scaling of technology. CNFET bandgap is directly affected by its chirality and diameter, which is the biggest advantage over MOSFETs. The study of various types of CNFETs comparison has been made in this paper.

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