Volume 4 Issue 2 March - May 2016
Research Paper
Analysis of
Carbon Nanotube Field-Effect Transistor
Bal Krishnan*, Sanjai Kumar Agarwal**,
Sanjeev Kumar***
* Assistant
Professor, Department of Electronics Engineering, YMCA University of Science
and Technology, Faridabad, Haryana, India.
** Professor, Department of Electronics Engineering, YMCA
University of Science and Technology, Faridabad, Haryana, India.
*** Director, DNS College of Engineering and Technology,
Amroha, Uttar Pradesh, India.
Krishan,
B.,Agarwal, S. K., and Kumar, S. (2016). Analysis of Carbon Nanotube
Field-Effect Transistor. i-manager’s
Journal on Circuits and Systems, 4(2), 22-29. https://doi.org/10.26634/jcir.4.2.8099
Abstract
This
paper explores the insights of the most outstanding application of carbon
nanotube in electronic field, the carbon nanotube field-effect transistor
(CNFET). The motivation of research in CNFET is fuelled by the unique electrical
features of CNT, especially the semiconducting feature. Besides, the continuous
effort to find future nanoelectronic device that can perform as excellent as
MOSFET also push the research of CNFET to be more aggressive. The first section
gives an overview of the structure of CNFET followed by the explanation of
CNFET operation as a switching device. The next section provides the comparison
between CNFET and MOSFET. In this paper, a comparison is being made between
conventional MOSFET and different types of CNFETs, and finally concluded a
future replacement of MOSFET. The major difference in CNFETs and MOSFET is that
it has CNT in channel instead of Silicon. CNFETs show improved characteristics
with scaling of technology. CNFET bandgap is directly affected by its chirality
and diameter, which is the biggest advantage over MOSFETs. The study of various
types of CNFETs comparison has been made in this paper.
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