Volume 4 Issue 1 December - February 2016
Research Paper
Power Gating
Techniques for Leakage Reduction in CMOS Circuits - A Brief Survey
M. Kavitha*, T. Govindaraj**
* Assistant
Professor, Department of Electronics and Communication Engineering, Government
College of Engineering, Bargur, India.
** Professor, Department of Electrical and Electronics
Engineering, VSB Engineering College, Karur, India.
Kavitha, M. and
Govindaraj, T. (2016). Power Gating Techniques for Leakage Reduction in CMOS
Circuits - A Brief Survey. i-manager’s
Journal on Circuits and Systems, 4(1), 20-26. https://doi.org/10.26634/jcir.4.1.6032
Abstract
In this
modern era, the challenge for IC designers is to maintain a prolonged battery
lifetime in portable devices as power consumption is soaring with increased
functionality and operating frequency. Excessive power consumption is the major
barrier to the advancement of nanoscale CMOS VLSI circuits. Leakage currents
are important sources of power consumption in sub-nanometre regime designs. The
main sources of leakage are sub threshold leakage, gate leakage, gate induced
drain leakage and junction leakage. Sub threshold leakage is the major
contributor of static power and minimizing this component is more important in
order to alleviate static power. The portable electronic gadgets like
smartphones, tablet computers, etc., generally has much longer stand-by period
than the operating period. Therefore an increased stand-by current wastes battery
power seriously due to leakage. Power gating techniques help to minimize the
leakage currents and increase the performance of integrated circuits. The basic
strategy of power gating is to provide two power modes, a sleep mode and an
active mode. The goal is to switch between these modes at the appropriate time
and in the appropriate manner to maximize power savings while decreasing the
impact to performance. This paper gives an overview of power gating techniques
for controlling static power dissipation and retaining data in stand by
periods.
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